Diameter dependence of electron mobility in InGaAs nanowires
نویسندگان
چکیده
Related Articles Identification of As-vacancy complexes in Zn-diffused GaAs J. Appl. Phys. 113, 094902 (2013) Excitation dependent two-component spontaneous emission and ultrafast amplified spontaneous emission in dislocation-free InGaN nanowires Appl. Phys. Lett. 102, 091105 (2013) Polycrystalline indium phosphide on silicon using a simple chemical route J. Appl. Phys. 113, 093504 (2013) Improved Ohmic contacts to plasma etched n-Al0.5Ga0.5N by annealing under nitrogen ambient before metal deposition J. Appl. Phys. 113, 094503 (2013) On the mechanism of blistering phenomenon in high temperature H-implanted GaN Appl. Phys. Lett. 102, 081606 (2013)
منابع مشابه
Stoichiometric effect on electrical, optical, and structural properties of composition-tunable In(x)Ga(1-x)As nanowires.
Ternary InGaAs nanowires have recently attracted extensive attention due to their superior electron mobility as well as the ability to tune the band gap for technological applications ranging from high-performance electronics to high-efficiency photovoltaics. However, due to the difficulties in synthesis, there are still considerable challenges to assess the correlation among electrical, optica...
متن کاملDiameter-dependent conductance of InAs nanowires
Electrical conductance through InAs nanowires is relevant for electronic applications as well as for fundamental quantum experiments. Here, we employ nominally undoped, slightly tapered InAs nanowires to study the diameter dependence of their conductance. By contacting multiple sections of each wire, we can study the diameter dependence within individual wires without the need to compare differ...
متن کاملSize-Dependent-Transport Study of In0.53Ga0.47As Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher oncurrent, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion...
متن کاملDomain wall mobility in nanowires: Transverse versus vortex walls
The motion of domain walls in ferromagnetic, cylindrical nanowires is investigated numerically by solving the Landau-Lifshitz-Gilbert equation for a classical spin model in which energy contributions from exchange, crystalline anisotropy, dipole-dipole interaction, and a driving magnetic field are considered. Depending on the diameter, either transverse domain walls or vortex walls are found. T...
متن کاملMethod for electrical characterization of nanowires.
The ability to control conductivity in semiconductor nanostructures is often challenged by surface states trapping the majority of the charge carriers. Addressing this challenge requires a reliable method for assessing electrical properties such as carrier concentration and mobility. Unfortunately, here we are facing another challenge, as the Hall effect is geometrically inapplicable to nanowir...
متن کامل